CAPACITANCE @ VR, F: 1.5PF @ 0V, 1MHZ
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - AVERAGE RECTIFIED (IO): 250MA (DC)
CURRENT - REVERSE LEAKAGE @ VR: 1ΜA @ 75V
DIODE TYPE: STANDARD
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NXP USA INC.
MANUFACTURER PART NUMBER: BAS216,115
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE - JUNCTION: 150°C (MAX)
PACKAGE / CASE: SOD-110
PACKAGING: REEL
REVERSE RECOVERY TIME (TRR): 4NS
SPEED: FAST RECOVERY =< 500NS, > 200MA (IO)
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOD2
VOLTAGE - DC REVERSE (VR) (MAX): 75V
VOLTAGE - FORWARD (VF) (MAX) @ IF: 1.25V @ 150MA
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