ADDITIONAL FEATURE:  FOR TRANSISTOR2 HFE IS 220

CASE CONNECTION:  COLLECTOR

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  30 V

CONFIGURATION:  CURRENT MIRROR

DC CURRENT GAIN-MIN (HFE):  220

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BCV62B

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  PNP

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR ELEMENT MATERIAL:  SILICON

TRANSITION FREQUENCY-NOM (FT):  100 MHZ

VCESAT-MAX:  650 MV