ADDITIONAL FEATURE:  LOW NOISE

CASE CONNECTION:  EMITTER

COLLECTOR CURRENT-MAX (IC):  30 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  4.5 V

CONFIGURATION:  SINGLE

DC CURRENT GAIN-MIN (HFE):  50

HIGHEST FREQUENCY BAND:  L BAND

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BFG425W

MOISTURE SENSITIVITY LEVEL:  NOT APPLICABLE

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  NPN

POWER DISSIPATION AMBIENT-MAX:  135 MW

POWER DISSIPATION-MAX (ABS):  135 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TRANSITION FREQUENCY-NOM (FT):  25 GHZ