ADDITIONAL FEATURE: LOW NOISE
CHARACTERISTIC IMPEDANCE: 75 O
CONSTRUCTION: MODULE
GAIN: 34 DB
MANUFACTURER: NXP SEMICONDUCTORS
MANUFACTURER PART NUMBER: BGY835C
NUMBER OF FUNCTIONS: 1
OPERATING FREQUENCY-MAX: 860 MHZ
OPERATING FREQUENCY-MIN: 40 MHZ
OPERATING TEMPERATURE-MAX: 100 °C
OPERATING TEMPERATURE-MIN: -20 °C
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SOT-115J
PACKAGE EQUIVALENCE CODE: SOT-115J
PBFREE CODE: YES
POWER SUPPLIES: 24 V
RF/MICROWAVE DEVICE TYPE: WIDE BAND HIGH POWER
SUBCATEGORY: RF/MICROWAVE AMPLIFIERS
SUPPLY CURRENT-MAX: 340 MA
TECHNOLOGY: HYBRID
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