CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 850MA (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 2.1NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 83PF @ 24V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NXP USA INC.
MANUFACTURER PART NUMBER: BSH103,215
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 540MW (TA)
RDS ON (MAX) @ ID, VGS: 400 MOHM @ 500MA, 4.5V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23 (TO-236AB)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 400MV @ 1MA (MIN)
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