CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.9A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 10NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 190PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NXP USA INC.
MANUFACTURER PART NUMBER: BSH108,215
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -65°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 830MW
RDS ON (MAX) @ ID, VGS: 120 MOHM @ 1A, 10V
SERIES: TRENCHMOS?
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23 (TO-236AB)
VGS(TH) (MAX) @ ID: 2V @ 1MA
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