BREAKDOWN VOLTAGE-MIN:  10.4 V

CASE CONNECTION:  ISOLATED

CLAMPING VOLTAGE-MAX:  15.7 V

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  TRANS VOLTAGE SUPPRESSOR DIODE

JESD-30 CODE:  O-LELF-R2

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BZD27-C11,115

MOISTURE SENSITIVITY LEVEL:  1

NON-REP PEAK REV POWER DIS-MAX:  300 W

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  175 °C

OPERATING TEMPERATURE-MIN:  -65 °C

PACKAGE BODY MATERIAL:  GLASS

PACKAGE DESCRIPTION:  O-LELF-R2

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  LONG FORM

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  800 MW

QUALIFICATION STATUS:  NOT QUALIFIED

REVERSE CURRENT-MAX:  5 ΜA

SURFACE MOUNT:  YES

TECHNOLOGY:  AVALANCHE

TERMINAL FINISH:  TIN

TERMINAL FORM:  WRAP AROUND

TERMINAL POSITION:  END

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED