ADDITIONAL FEATURE:  CAPACITANCE IS CAPTURED FROM THE GRAPH

BRAND NAME:  NXP SEMICONDUCTOR

CASE CONNECTION:  ISOLATED

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  ZENER DIODE

DYNAMIC IMPEDANCE-MAX:  45 O

JEDEC-95 CODE:  DO-41

JESD-30 CODE:  O-LALF-W2

JESD-609 CODE:  E3

KEYWORDS:  9335 007 70113

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PACKAGE CODE:  SOD66

MANUFACTURER PART NUMBER:  BZV85-C33,113

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  200 °C

PACKAGE BODY MATERIAL:  GLASS

PACKAGE DESCRIPTION:  O-LALF-W2

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  LONG FORM

PART PACKAGE CODE:  DO-4

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  2

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  1 W

QUALIFICATION STATUS:  NOT QUALIFIED

REFERENCE STANDARD:  CECC50005-010

REFERENCE VOLTAGE-NOM:  33 V

REVERSE CURRENT-MAX:  50 NA

SUBCATEGORY:  VOLTAGE REFERENCE DIODES

SURFACE MOUNT:  NO

TECHNOLOGY:  ZENER

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  WIRE

TERMINAL POSITION:  AXIAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

VOLTAGE TEMP COEFF-MAX:  35 MV/°C

VOLTAGE TOL-MAX:  5 %

WORKING TEST CURRENT:  8 MA