BRAND NAME:  NXP SEMICONDUCTOR

CASE CONNECTION:  CATHODE

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  ZENER DIODE

DYNAMIC IMPEDANCE-MAX:  130 O

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E3

KEYWORDS:  9340 149 00115

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PACKAGE CODE:  SOT223

MANUFACTURER PART NUMBER:  BZV90-C39,115

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-73

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  1.5 W

QUALIFICATION STATUS:  NOT QUALIFIED

REFERENCE VOLTAGE-NOM:  39 V

REVERSE CURRENT-MAX:  50 NA

SUBCATEGORY:  VOLTAGE REFERENCE DIODES

SURFACE MOUNT:  YES

TECHNOLOGY:  ZENER

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

VOLTAGE TEMP COEFF-MAX:  41.2 MV/°C

VOLTAGE TOL-MAX:  5 %

WORKING TEST CURRENT:  2 MA