BRAND NAME:  NXP SEMICONDUCTOR

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  ZENER DIODE

DYNAMIC IMPEDANCE-MAX:  150 O

JESD-30 CODE:  R-PDSO-G2

JESD-609 CODE:  E3

KEYWORDS:  9340 576 41115

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PACKAGE CODE:  SOD323

MANUFACTURER PART NUMBER:  BZX384-C11,115

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  150 °C

OPERATING TEMPERATURE-MIN:  -65 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOD

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  2

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  300 MW

QUALIFICATION STATUS:  NOT QUALIFIED

REFERENCE VOLTAGE-NOM:  11 V

SUBCATEGORY:  VOLTAGE REFERENCE DIODES

SURFACE MOUNT:  YES

TECHNOLOGY:  ZENER

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

VOLTAGE TOL-MAX:  5 %

WORKING TEST CURRENT:  5 MA