CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

EXPANDED DESCRIPTION:  P-CHANNEL 20V 2A (TA) 400MW (TA), 2.8W (TC) SURFACE MOUNT TO-236AB (SOT23)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  380PF @ 6V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  NX2301P,215

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  400MW (TA), 2.8W (TC)

RDS ON (MAX) @ ID, VGS:  120 MOHM @ 1A, 4.5V

SERIES:  AUTOMOTIVE, AEC-Q101, TRENCHMOS?

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1.1V @ 250ΜA

CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET P-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  6NC @ 4.5V

INPUT CAPACITANCE (CISS) @ VDS:  380PF @ 6V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP USA INC.

MANUFACTURER PART NUMBER:  NX2301P,215

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  400MW

RDS ON (MAX) @ ID, VGS:  120 MOHM @ 1A, 4.5V

SERIES:  AUTOMOTIVE, AEC-Q101, TRENCHMOS?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23 (TO-236AB)

VGS(TH) (MAX) @ ID:  1.1V @ 250ΜA