ADDITIONAL FEATURE:  BUILT IN BIAS RESISTANCE RATIO IS 4.7

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-BASE CAPACITANCE-MAX:  3.5 PF

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SINGLE WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  100

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PDTC114YE

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-75

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  NPN

POWER DISSIPATION AMBIENT-MAX:  150 MW

POWER DISSIPATION-MAX (ABS):  150 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  BIP GENERAL PURPOSE SMALL SIGNAL

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

VCESAT-MAX:  300 MV