PEMB9,115
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 300MW SURFACE MOUNT SOT-666Call for availability
Manufactured by:
Mfr Part#: PEMB9,115
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
STANDARD PACKAGE: 4,000
SUPPLIER DEVICE PACKAGE: SOT-666
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
STANDARD PACKAGE: 4,000
SUPPLIER DEVICE PACKAGE: SOT-666
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 100 @ 5MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 300MW SURFACE MOUNT SOT-666
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NEXPERIA USA INC.
MANUFACTURER PART NUMBER: PEMB9,115
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER - MAX: 300MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 47 KOHMS
STANDARD PACKAGE: 4,000
SUPPLIER DEVICE PACKAGE: SOT-666
TRANSISTOR TYPE: 2 PNP - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 100MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
ALTERNATE PARTS: PEMB9,315
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 100 @ 5MA, 5V
FAMILY: TRANSISTORS - BIPOLAR (BJT) - ARRAYS, PRE-BIASED
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NXP SEMICONDUCTORS
MANUFACTURER PART NUMBER: PEMB9,115
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER - MAX: 300MW
RESISTOR - BASE (R1) (OHMS): 10K
RESISTOR - EMITTER BASE (R2) (OHMS): 47K
STANDARD PACKAGE: 4,000
SUPPLIER DEVICE PACKAGE: SOT-666
TRANSISTOR TYPE: 2 PNP - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 100MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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