PEMD6,115

PEMD6,115

PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 300MW SURFACE MOUNT SOT-666

Call for availability

Manufactured by:

NEXPERIA

Mfr Part#:  PEMD6,115

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-666

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

BASE PART NUMBER:  P*MD6

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  200 @ 1MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 300MW SURFACE MOUNT SOT-666

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PEMD6,115

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  300MW

RESISTOR - BASE (R1):  4.7 KOHMS

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-666

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  100MV @ 250ΜA, 5MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

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