ADDITIONAL FEATURE:  ULTRA LOW LEAKAGE CURRENT

BRAND NAME:  NXP SEMICONDUCTOR

BREAKDOWN VOLTAGE-MAX:  8.2 V

BREAKDOWN VOLTAGE-MIN:  7 V

BREAKDOWN VOLTAGE-NOM:  7.6 V

CLAMPING VOLTAGE-MAX:  28 V

CONFIGURATION:  COMMON CATHODE, 2 ELEMENTS

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  TRANS VOLTAGE SUPPRESSOR DIODE

JEDEC-95 CODE:  TO-236AB

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E3

KEYWORDS:  9340 588 64215

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PACKAGE CODE:  SOT23

MANUFACTURER PART NUMBER:  PESD5V0L2BT,215

MOISTURE SENSITIVITY LEVEL:  1

NON-REP PEAK REV POWER DIS-MAX:  350 W

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  TO-236

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  3

POLARITY:  BIDIRECTIONAL

QUALIFICATION STATUS:  NOT QUALIFIED

REP PK REVERSE VOLTAGE-MAX:  5 V

SUBCATEGORY:  TRANSIENT SUPPRESSORS

SURFACE MOUNT:  YES

TECHNOLOGY:  AVALANCHE

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40