ADDITIONAL FEATURE:  LOW CAPACITANCE

BREAKDOWN VOLTAGE-MAX:  9.5 V

BREAKDOWN VOLTAGE-MIN:  5.5 V

BREAKDOWN VOLTAGE-NOM:  7.5 V

CLAMPING VOLTAGE-MAX:  14 V

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  TRANS VOLTAGE SUPPRESSOR DIODE

JESD-30 CODE:  R-PDSO-G2

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PESD5V0S1BA

MOISTURE SENSITIVITY LEVEL:  1

NON-REP PEAK REV POWER DIS-MAX:  130 W

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-76

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  2

POLARITY:  BIDIRECTIONAL

QUALIFICATION STATUS:  NOT QUALIFIED

REP PK REVERSE VOLTAGE-MAX:  5 V

SUBCATEGORY:  TRANSIENT SUPPRESSORS

SURFACE MOUNT:  YES

TECHNOLOGY:  AVALANCHE

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30