ADDITIONAL FEATURE:  FAST SWITCHING

AVALANCHE ENERGY RATING (EAS):  100 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  25 V

DRAIN CURRENT-MAX (ID):  75 A

DRAIN-SOURCE ON RESISTANCE-MAX:  17.1 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSSO-G2

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PHD77NQ03T

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  240 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TRANSISTOR ELEMENT MATERIAL:  SILICON