CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.5A (TA)
DETAILED DESCRIPTION: N-CHANNEL 55V 2.5A (TA) 1.8W (TA), 8.3W (TC) SURFACE MOUNT SOT-223
DRAIN TO SOURCE VOLTAGE (VDSS): 55V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 4.5NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 330PF @ 25V
MANUFACTURER: NXP USA INC.
MANUFACTURER PART NUMBER: PHT6N06LT,135
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.8W (TA), 8.3W (TC)
RDS ON (MAX) @ ID, VGS: 150 MOHM @ 5A, 5V
SERIES: TRENCHMOS?
SUPPLIER DEVICE PACKAGE: SOT-223
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±13V
VGS(TH) (MAX) @ ID: 2V @ 1MA
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