CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 100V 3A (TA) 1.8W (TA), 8.3W (TC) SURFACE MOUNT SOT-223

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  21NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  633PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PHT6NQ10T,135

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.8W (TA), 8.3W (TC)

RDS ON (MAX) @ ID, VGS:  90 MOHM @ 3A, 10V

SERIES:  TRENCHMOS?

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 1MA