CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.1A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 4.1A (TA) 510MW (TA), 5W (TC) SURFACE MOUNT TO-236AB (SOT23)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.3NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  209PF @ 15V

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PMV45EN2R

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  510MW (TA), 5W (TC)

RDS ON (MAX) @ ID, VGS:  42 MOHM @ 4.1A, 10V

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2V @ 250ΜA

CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.1A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

GATE CHARGE (QG) @ VGS:  6.3NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  209PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PMV45EN2R

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  510MW

RDS ON (MAX) @ ID, VGS:  42 MOHM @ 4.1A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

VGS(TH) (MAX) @ ID:  2V @ 250ΜA