PSMN1R0-40YLDX
N-CHANNEL 40V 100A (TC) 198W (TC) SURFACE MOUNT LFPAK56, POWER-SO8Call for availability
Manufactured by:
Mfr Part#: PSMN1R0-40YLDX
PACKAGE / CASE: SC-100, SOT-669
PACKAGING: REEL
STANDARD PACKAGE: 1,500
SUPPLIER DEVICE PACKAGE: LFPAK56, POWER-SO8
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 100A (TC)
DETAILED DESCRIPTION: N-CHANNEL 40V 100A (TC) 198W (TC) SURFACE MOUNT LFPAK56, POWER-SO8
DRAIN TO SOURCE VOLTAGE (VDSS): 40V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 127NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 8845PF @ 20V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NEXPERIA USA INC.
MANUFACTURER PART NUMBER: PSMN1R0-40YLDX
MANUFACTURER STANDARD LEAD TIME: 26 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SC-100, SOT-669
PACKAGING: REEL
POWER DISSIPATION (MAX): 198W (TC)
RDS ON (MAX) @ ID, VGS: 1.1 MOHM @ 25A, 10V
STANDARD PACKAGE: 1,500
SUPPLIER DEVICE PACKAGE: LFPAK56, POWER-SO8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.2V @ 1MA
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