CASE CONNECTION:  SOURCE

CONFIGURATION:  SINGLE

DS BREAKDOWN VOLTAGE-MIN:  25 V

DRAIN CURRENT-MAX (ID):  50 MA

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  0.03 PF

HIGHEST FREQUENCY BAND:  VERY HIGH FREQUENCY BAND

JEDEC-95 CODE:  TO-72

JESD-30 CODE:  O-MBCY-W4

MANUFACTURER:  NTE ELECTRONICS INC

MANUFACTURER PART NUMBER:  NTE222

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  DUAL GATE, DEPLETION MODE

PACKAGE BODY MATERIAL:  METAL

PACKAGE DESCRIPTION:  CYLINDRICAL, O-MBCY-W4

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  CYLINDRICAL

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  330 MW

POWER GAIN-MIN (GP):  14 DB

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FORM:  WIRE

TERMINAL POSITION:  BOTTOM

TRANSISTOR APPLICATION:  AMPLIFIER

TRANSISTOR ELEMENT MATERIAL:  SILICON