BASE PART NUMBER: 2N5401
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 600MA
CURRENT - COLLECTOR CUTOFF (MAX): 50NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 60 @ 10MA, 5V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR PNP 150V 600MA 300MHZ 625MW THROUGH HOLE TO-92-3
FREQUENCY - TRANSITION: 300MHZ
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2N5401G
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA)
PACKAGING: BULK PACK
POWER - MAX: 625MW
SUPPLIER DEVICE PACKAGE: TO-92-3
TRANSISTOR TYPE: PNP
VCE SATURATION (MAX) @ IB, IC: 500MV @ 5MA, 50MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 150V
ALTERNATE PARTS: 2N5401
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