CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 25A
CURRENT - COLLECTOR CUTOFF (MAX): 2MA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 20 @ 10A, 4V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 80V 25A 4MHZ 200W THROUGH HOLE TO-3
FREQUENCY - TRANSITION: 4MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2N5886G
MANUFACTURER STANDARD LEAD TIME: 18 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-204AA, TO-3
PACKAGING: TRAY
POWER - MAX: 200W
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: TO-3
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 4V @ 6.25A, 25A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 80V
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