2N6052G

2N6052G

BIPOLAR (BJT) TRANSISTOR PNP - DARLINGTON 100V 12A 150W THROUGH HOLE TO-3

Call for availability

Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  2N6052G

PACKAGE / CASE:  TO-204AA, TO-3

PACKAGING:  TRAY

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  TO-3

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  12A

CURRENT - COLLECTOR CUTOFF (MAX):  1MA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  750 @ 6A, 3V

EXPANDED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP - DARLINGTON 100V 12A 150W THROUGH HOLE TO-3

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2N6052G

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-204AA, TO-3

PACKAGING:  TRAY

POWER - MAX:  150W

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  TO-3

TRANSISTOR TYPE:  PNP - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  3V @ 120MA, 12A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  100V

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