CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 25A
CURRENT - COLLECTOR CUTOFF (MAX): 50ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 30 @ 10A, 2V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 150V 25A 40MHZ 200W THROUGH HOLE TO-3
FREQUENCY - TRANSITION: 40MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2N6341G
MANUFACTURER STANDARD LEAD TIME: 2 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-204AA, TO-3
PACKAGING: TRAY
POWER - MAX: 200W
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: TO-3
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 1.8V @ 2.5A, 25A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 150V
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