2N7000TA
N-CHANNEL 60V 200MA (TC) 400MW (TA) THROUGH HOLE TO-92-3Call for availability
Manufactured by:
Mfr Part#: 2N7000TA
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)
PACKAGING: TAPE BOX
STANDARD PACKAGE: 2,000
SUPPLIER DEVICE PACKAGE: TO-92-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: 2N7000
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 200MA (TC)
DETAILED DESCRIPTION: N-CHANNEL 60V 200MA (TC) 400MW (TA) THROUGH HOLE TO-92-3
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 50PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2N7000TA
MANUFACTURER STANDARD LEAD TIME: 27 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)
PACKAGING: TAPE BOX
POWER DISSIPATION (MAX): 400MW (TA)
RDS ON (MAX) @ ID, VGS: 5 OHM @ 500MA, 10V
STANDARD PACKAGE: 2,000
SUPPLIER DEVICE PACKAGE: TO-92-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3V @ 1MA
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