CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - DRAIN (IDSS) @ VDS (VGS=0): 600ΜA @ 10V
CURRENT DRAIN (ID) - MAX: 10MA
DETAILED DESCRIPTION: JFET N-CHANNEL 10MA 200MW SURFACE MOUNT 3-CP
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2SK3666-2-TB-E
MANUFACTURER STANDARD LEAD TIME: 19 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 200MW
RESISTANCE - RDS(ON): 200 OHMS
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 3-CP
VOLTAGE - CUTOFF (VGS OFF) @ ID: 180MV @ 1ΜA
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