CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 150MA (TA)
DETAILED DESCRIPTION: N-CHANNEL 30V 150MA (TA) 250MW (TA) SURFACE MOUNT 3-CP
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.5V, 4V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 1.58NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 7PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: 3LN01C-TB-H
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 250MW (TA)
RDS ON (MAX) @ ID, VGS: 3.7 OHM @ 80MA, 4V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 3-CP
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
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