BASE PART NUMBER: BSP52
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 1A
CURRENT - COLLECTOR CUTOFF (MAX): 10ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 2000 @ 500MA, 10V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 80V 1A 800MW SURFACE MOUNT SOT-223
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: BSP52T1G
MANUFACTURER STANDARD LEAD TIME: 32 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -65°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER - MAX: 800MW
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: SOT-223
TRANSISTOR TYPE: NPN - DARLINGTON
VCE SATURATION (MAX) @ IB, IC: 1.3V @ 500ΜA, 500MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 80V
ALTERNATE PARTS: BSP52T3G
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