CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 170MA (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 20PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: BVSS123LT1G
MANUFACTURER STANDARD LEAD TIME: 9 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 225MW (TA)
RDS ON (MAX) @ ID, VGS: 6 OHM @ 100MA, 10V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 2.8V @ 1MA
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