ADDITIONAL FEATURE:  BUILT-IN BIAS RESISTOR RATIO IS 1

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SINGLE WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  35

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E0

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  CASE 463-01

MANUFACTURER PART NUMBER:  DTC114EET1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-75

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  240

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  NPN

POWER DISSIPATION-MAX (ABS):  200 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  BIP GENERAL PURPOSE SMALL SIGNALS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN80PB20)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON