EMD4DXV6T5G
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 500MW SURFACE MOUNT SOT-563Call for availability
Manufactured by:
Mfr Part#: EMD4DXV6T5G
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
SUPPLIER DEVICE PACKAGE: SOT-563
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 80 @ 5MA, 10V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 500MW SURFACE MOUNT SOT-563
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: EMD4DXV6T5G
MANUFACTURER STANDARD LEAD TIME: 2 WEEKS
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER - MAX: 500MW
RESISTOR - BASE (R1): 47 KOHMS, 10 KOHMS
RESISTOR - EMITTER BASE (R2): 47 KOHMS
SUPPLIER DEVICE PACKAGE: SOT-563
TRANSISTOR TYPE: 1 NPN, 1 PNP - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 250MV @ 300ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
ALTERNATE PARTS: EMD4DXV6T1G
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