CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 5MA, 10V

EXPANDED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 230MW SURFACE MOUNT SOT-553

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  EMG2DXV5T5G

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-553

PACKAGING:  REEL

POWER - MAX:  230MW

RESISTOR - BASE (R1) (OHMS):  47K

RESISTOR - EMITTER BASE (R2) (OHMS):  47K

STANDARD PACKAGE:  8,000

SUPPLIER DEVICE PACKAGE:  SOT-553

TRANSISTOR TYPE:  2 NPN - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  250MV @ 300ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V