CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 17A (TC)
DETAILED DESCRIPTION: N-CHANNEL 650V 17A (TC) 144W (TC) THROUGH HOLE TO-220-3
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 33NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1350PF @ 400V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FCP190N65S3R0
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
POWER DISSIPATION (MAX): 144W (TC)
RDS ON (MAX) @ ID, VGS: 190 MOHM @ 8.5A, 10V
SERIES: SUPERFET® III
STANDARD PACKAGE: 800
SUPPLIER DEVICE PACKAGE: TO-220-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 4.5V @ 1.7MA
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