CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 24A (TC)
DETAILED DESCRIPTION: N-CHANNEL 650V 24A (TC) 38W (TC) THROUGH HOLE TO-220F
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 44NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1790PF @ 400V
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FCPF125N65S3
MANUFACTURER STANDARD LEAD TIME: 11 WEEKS
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3 FULL PACK
POWER DISSIPATION (MAX): 38W (TC)
RDS ON (MAX) @ ID, VGS: 125 MOHM @ 12A, 10V
SERIES: SUPERFET® III
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220F
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 4.5V @ 2.4MA
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