CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 59A (TC)
DETAILED DESCRIPTION: N-CHANNEL 300V 59A (TC) 500W (TC) THROUGH HOLE TO-3PN
DRAIN TO SOURCE VOLTAGE (VDSS): 300V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 100NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4670PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FDA59N30
MANUFACTURER STANDARD LEAD TIME: 8 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-3P-3, SC-65-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 500W (TC)
RDS ON (MAX) @ ID, VGS: 56 MOHM @ 29.5A, 10V
SERIES: UNIFET?
STANDARD PACKAGE: 450
SUPPLIER DEVICE PACKAGE: TO-3PN
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 5V @ 250ΜA
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