CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9A (TA), 61A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 9A (TA), 61A (TC) 150W (TC) SURFACE MOUNT TO-263AB

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  53NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2880PF @ 25V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDB3652-F085

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  150W (TC)

RDS ON (MAX) @ ID, VGS:  16 MOHM @ 61A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101, POWERTRENCH®

SUPPLIER DEVICE PACKAGE:  TO-263AB

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA

ALTERNATE PARTS:  FDB3652