Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 110A (TC)
DETAILED DESCRIPTION: N-CHANNEL 80V 110A (TC) 333W (TC) SURFACE MOUNT D²PAK (TO-263AB)
DRAIN TO SOURCE VOLTAGE (VDSS): 80V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 253NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 14600PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FDB86360-F085
MANUFACTURER STANDARD LEAD TIME: 33 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
POWER DISSIPATION (MAX): 333W (TC)
RDS ON (MAX) @ ID, VGS: 1.8 MOHM @ 80A, 10V
SERIES: AUTOMOTIVE, AEC-Q101, POWERTRENCH®
STANDARD PACKAGE: 800
SUPPLIER DEVICE PACKAGE: D²PAK (TO-263AB)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4.5V @ 250ΜA
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