CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 30V 4A (TA) 1.6W (TA) SURFACE MOUNT SUPERSOT?-6

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  8.1NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  470PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDC658AP

MANUFACTURER STANDARD LEAD TIME:  30 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.6W (TA)

RDS ON (MAX) @ ID, VGS:  50 MOHM @ 4A, 10V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  SUPERSOT?-6

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±25V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA