CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.4A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 5.4A (TA) 3.8W (TA), 42W (TC) SURFACE MOUNT TO-252-3

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  11NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  660PF @ 30V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDD5612

MANUFACTURER STANDARD LEAD TIME:  11 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.8W (TA), 42W (TC)

RDS ON (MAX) @ ID, VGS:  55 MOHM @ 5.4A, 10V

SERIES:  POWERTRENCH®

SUPPLIER DEVICE PACKAGE:  TO-252-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA