Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 7A
DETAILED DESCRIPTION: MOSFET ARRAY 2 N-CHANNEL (DUAL) 25V 7A 800MW SURFACE MOUNT 8-MLP, MICROFET (3X1.9)
DRAIN TO SOURCE VOLTAGE (VDSS): 25V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 N-CHANNEL (DUAL)
GATE CHARGE (QG) (MAX) @ VGS: 17NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 890PF @ 13V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FDMB3900AN
MANUFACTURER STANDARD LEAD TIME: 18 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERWDFN
PACKAGING: REEL
POWER - MAX: 800MW
RDS ON (MAX) @ ID, VGS: 23 MOHM @ 7A, 10V
SERIES: POWERTRENCH®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 8-MLP, MICROFET (3X1.9)
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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