FDV303N

FDV303N

N-CHANNEL 25V 680MA (TA) 350MW (TA) SURFACE MOUNT SOT-23

Call for availability

Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  FDV303N

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  680MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 25V 680MA (TA) 350MW (TA) SURFACE MOUNT SOT-23

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.7V, 4.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  2.3NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  50PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDV303N

MANUFACTURER STANDARD LEAD TIME:  42 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  350MW (TA)

RDS ON (MAX) @ ID, VGS:  450 MOHM @ 500MA, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA

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