CAPACITANCE @ VR, F: 887PF @ 1V, 100KHZ
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - AVERAGE RECTIFIED (IO): 23A (DC)
CURRENT - REVERSE LEAKAGE @ VR: 200ΜA @ 650V
DETAILED DESCRIPTION: DIODE SILICON CARBIDE SCHOTTKY 650V 23A (DC) THROUGH HOLE TO-247-2
DIODE TYPE: SILICON CARBIDE SCHOTTKY
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FFSH1665A
MANUFACTURER STANDARD LEAD TIME: 39 WEEKS
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE - JUNCTION: -55°C ~ 150°C
PACKAGE / CASE: TO-247-2
REVERSE RECOVERY TIME (TRR): 0NS
SPEED: NO RECOVERY TIME > 500MA (IO)
SUPPLIER DEVICE PACKAGE: TO-247-2
VOLTAGE - DC REVERSE (VR) (MAX): 650V
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