CAPACITANCE @ VR, F: 575PF @ 1V, 100KHZ
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - AVERAGE RECTIFIED (IO): 13A (DC)
CURRENT - REVERSE LEAKAGE @ VR: 200ΜA @ 650V
DETAILED DESCRIPTION: DIODE SILICON CARBIDE SCHOTTKY 650V 13A (DC) THROUGH HOLE TO-247-3
DIODE TYPE: SILICON CARBIDE SCHOTTKY
LEAD FREE STATUS: LEAD FREE
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FFSH2065ADN-F155
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE - JUNCTION: -55°C ~ 175°C
PACKAGE / CASE: TO-247-3
REVERSE RECOVERY TIME (TRR): 0NS
SPEED: NO RECOVERY TIME > 500MA (IO)
STANDARD PACKAGE: 450
SUPPLIER DEVICE PACKAGE: TO-247-3
VOLTAGE - DC REVERSE (VR) (MAX): 650V
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