CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11.4A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 900V 11.4A (TC) 300W (TC) THROUGH HOLE TO-3P

DRAIN TO SOURCE VOLTAGE (VDSS):  900V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  94NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3500PF @ 25V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQA11N90

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-3P-3, SC-65-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  300W (TC)

RDS ON (MAX) @ ID, VGS:  960 MOHM @ 5.7A, 10V

SERIES:  QFET®

SUPPLIER DEVICE PACKAGE:  TO-3P

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA

ALTERNATE PARTS:  FQA11N90-F109