FQD4N20TM
N-CHANNEL 200V 3A (TC) 2.5W (TA), 30W (TC) SURFACE MOUNT D-PAKCall for availability
Manufactured by:
Mfr Part#: FQD4N20TM
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: D-PAK
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 3A (TC)
DETAILED DESCRIPTION: N-CHANNEL 200V 3A (TC) 2.5W (TA), 30W (TC) SURFACE MOUNT D-PAK
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 6.5NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 220PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FQD4N20TM
MANUFACTURER STANDARD LEAD TIME: 4 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.5W (TA), 30W (TC)
RDS ON (MAX) @ ID, VGS: 1.4 OHM @ 1.5A, 10V
SERIES: QFET®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: D-PAK
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 5V @ 250ΜA
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