CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 35A (TC)
DETAILED DESCRIPTION: N-CHANNEL 60V 35A (TC) 85W (TC) THROUGH HOLE TO-220AB
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 34NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1060PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: HUF76423P3
MANUFACTURER STANDARD LEAD TIME: 4 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 85W (TC)
RDS ON (MAX) @ ID, VGS: 30 MOHM @ 35A, 10V
SERIES: ULTRAFET?
STANDARD PACKAGE: 800
SUPPLIER DEVICE PACKAGE: TO-220AB
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±16V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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