BASE PART NUMBER: MJD122
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 8A
CURRENT - COLLECTOR CUTOFF (MAX): 10ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 1000 @ 4A, 4V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 100V 8A 4MHZ 1.75W SURFACE MOUNT DPAK
FREQUENCY - TRANSITION: 4MHZ
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MJD122T4G
MANUFACTURER STANDARD LEAD TIME: 13 WEEKS
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -65°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER - MAX: 1.75W
SUPPLIER DEVICE PACKAGE: DPAK
TRANSISTOR TYPE: NPN - DARLINGTON
VCE SATURATION (MAX) @ IB, IC: 4V @ 80MA, 8A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 100V
ALTERNATE PARTS: NJVMJD122T4G-VF01 MJD122G MJD122G
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