BASE PART NUMBER: MJD31
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 3A
CURRENT - COLLECTOR CUTOFF (MAX): 50ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 10 @ 3A, 4V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 100V 3A 3MHZ 1.56W SURFACE MOUNT DPAK
FREQUENCY - TRANSITION: 3MHZ
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MJD31CT4G
MANUFACTURER STANDARD LEAD TIME: 7 WEEKS
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -65°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER - MAX: 1.56W
SUPPLIER DEVICE PACKAGE: DPAK
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 1.2V @ 375MA, 3A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 100V
ALTERNATE PARTS: NJVMJD31CRLG MJD31CRLG MJD31CG MJD31CRLG MJD31CG
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